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US Patent Issued to EBARA on July 28 for "Plating apparatus and plating method" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,692,617, issued on July 28, was assigned to EBARA Corp. (Tokyo). "Plating apparatus and plating method" was invented by Yusui Goto (Tokyo), Kaz... Read More


US Patent Issued to EBARA on July 28 for "Substrate holder, apparatus for plating, method of plating and storage medium" (Japanese Inventor)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,692,618, issued on July 28, was assigned to EBARA Corp. (Tokyo). "Substrate holder, apparatus for plating, method of plating and storage medium... Read More


US Patent Issued to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, TOYO ALUMINIUM, TOYOTA TSUSHO on July 28 for "Method for producing aluminum nitride substrate, aluminum nitride substrate, and method for suppressing introduction of dislocation into aluminum nitride growth layer" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,692,619, issued on July 28, was assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION (Hyogo, Japan), TOYO ALUMINIUM K.K. (Osaka, Japan) and TOYOTA ... Read More


US Patent Issued to HERMES-EPITEK on July 28 for "Apparatus for producing silicon carbide crystal" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,692,620, issued on July 28, was assigned to HERMES-EPITEK CORP. (Taipei City, Taiwan). "Apparatus for producing silicon carbide crystal" was in... Read More


US Patent Issued to SILTRONIC on July 28 for "Method for depositing an epitaxial layer on a substrate wafer made of semiconductor material in a deposition device" (German Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,692,621, issued on July 28, was assigned to SILTRONIC AG (Munich). "Method for depositing an epitaxial layer on a substrate wafer made of semic... Read More


US Patent Issued to Hon Young Semiconductor on July 28 for "Semiconductor structure and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,692,622, issued on July 28, was assigned to Hon Young Semiconductor Corp. (Hsinchu City, Taiwan). "Semiconductor structure and manufacturing me... Read More


US Patent Issued to Kokusai Electric on July 28 for "Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,692,623, issued on July 28, was assigned to Kokusai Electric Corp. (Tokyo). "Method of processing substrate, method of manufacturing semiconduc... Read More


US Patent Issued to MITSUBISHI CHEMICAL, THE JAPAN STEEL WORKS on July 28 for "Gallium nitride crystal, gallium nitride substrate, and method for producing gallium nitride crystal" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,692,624, issued on July 28, was assigned to MITSUBISHI CHEMICAL Corp. (Tokyo) and THE JAPAN STEEL WORKS LTD. (Tokyo). "Gallium nitride crystal,... Read More


US Patent Issued to Sumitomo Chemical on July 28 for "Gallium nitride single crystal substrate" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,692,625, issued on July 28, was assigned to Sumitomo Chemical Co. Ltd. (Tokyo). "Gallium nitride single crystal substrate" was invented by Taka... Read More


US Patent Issued to INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE on July 28 for "Apparatus for producing ingot" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,692,626, issued on July 28, was assigned to INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Hsinchu, Taiwan). "Apparatus for producing ingot" was inv... Read More